Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/409830
Title: Low-concentration NO2 detection with an adsorption porous silicon FET
Authors: Barillaro, Giuseppe;Diligenti, Alessandro;Nannini, Andrea;Strambini, Lucanos Marsilio;Comini, Elisabetta;Sberveglieri, Giorgio
subject: FET device;NO2 senser;Porous silicon (PS);Thermal oxidation
Year: 2008
Abstract: Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO<sub>2</sub> detection by using the APSFET is demonstrated for the first time. NO<sub>2</sub> concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.
Description: 

URI: http://localhost/handle/Hannan/430284
http://localhost/handle/Hannan/409830
Appears in Collections:2002-2008

Files in This Item:
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AL347814.pdf208.98 kBAdobe PDF
Title: Low-concentration NO2 detection with an adsorption porous silicon FET
Authors: Barillaro, Giuseppe;Diligenti, Alessandro;Nannini, Andrea;Strambini, Lucanos Marsilio;Comini, Elisabetta;Sberveglieri, Giorgio
subject: FET device;NO2 senser;Porous silicon (PS);Thermal oxidation
Year: 2008
Abstract: Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO<sub>2</sub> detection by using the APSFET is demonstrated for the first time. NO<sub>2</sub> concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.
Description: 

URI: http://localhost/handle/Hannan/430284
http://localhost/handle/Hannan/409830
Appears in Collections:2002-2008

Files in This Item:
File SizeFormat 
AL347814.pdf208.98 kBAdobe PDF
Title: Low-concentration NO2 detection with an adsorption porous silicon FET
Authors: Barillaro, Giuseppe;Diligenti, Alessandro;Nannini, Andrea;Strambini, Lucanos Marsilio;Comini, Elisabetta;Sberveglieri, Giorgio
subject: FET device;NO2 senser;Porous silicon (PS);Thermal oxidation
Year: 2008
Abstract: Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO<sub>2</sub> detection by using the APSFET is demonstrated for the first time. NO<sub>2</sub> concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.
Description: 

URI: http://localhost/handle/Hannan/430284
http://localhost/handle/Hannan/409830
Appears in Collections:2002-2008

Files in This Item:
File SizeFormat 
AL347814.pdf208.98 kBAdobe PDF