Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/227753
Title: Comparative Study of Negative Capacitance Ge pFETs With HfZrO<sub><italic>x</italic></sub> Partially and Fully Covering Gate Region
Authors: Jiuren Zhou;Genquan Han;Jing Li;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report a comparative study of the negative capacitance (NC) Ge pFETs with HfZrO<sub>x</sub> (HZO) partially and fully covering gate region. Utilizing the layout with HZO partially covering the gate, the internal voltage gain dV<sub>int</sub>/dV<sub>GS</sub> &gt; 10 is demonstrated in NC Ge pFETs, which is attributed to the NC effect induced by HZO film. NC transistor demonstrates the hysteresis above 2 V, the sub-60 mV/decade subthreshold swing, and the improved drive current over internal-gated MOSFET. As the area of HZO is increased to fully cover the gate, the increased ferroelectric capacitance C<sub>FE</sub> produces the much better capacitance matching between C<sub>FE</sub> and the MOS capacitance of TaN/HfO<sub>2</sub>/Ge channel, contributing to the elimination of hysteresis of the NC Ge pFET. NC Ge pFETs with the gate fully covered by HZO achieve a much higher gate capacitance peak and a 36% enhancement in drive current compared to the devices with HZO partially covering gate.
URI: http://localhost/handle/Hannan/227753
volume: 64
issue: 12
More Information: 4838,
4843
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8091118.pdf3.07 MBAdobe PDF
Title: Comparative Study of Negative Capacitance Ge pFETs With HfZrO<sub><italic>x</italic></sub> Partially and Fully Covering Gate Region
Authors: Jiuren Zhou;Genquan Han;Jing Li;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report a comparative study of the negative capacitance (NC) Ge pFETs with HfZrO<sub>x</sub> (HZO) partially and fully covering gate region. Utilizing the layout with HZO partially covering the gate, the internal voltage gain dV<sub>int</sub>/dV<sub>GS</sub> &gt; 10 is demonstrated in NC Ge pFETs, which is attributed to the NC effect induced by HZO film. NC transistor demonstrates the hysteresis above 2 V, the sub-60 mV/decade subthreshold swing, and the improved drive current over internal-gated MOSFET. As the area of HZO is increased to fully cover the gate, the increased ferroelectric capacitance C<sub>FE</sub> produces the much better capacitance matching between C<sub>FE</sub> and the MOS capacitance of TaN/HfO<sub>2</sub>/Ge channel, contributing to the elimination of hysteresis of the NC Ge pFET. NC Ge pFETs with the gate fully covered by HZO achieve a much higher gate capacitance peak and a 36% enhancement in drive current compared to the devices with HZO partially covering gate.
URI: http://localhost/handle/Hannan/227753
volume: 64
issue: 12
More Information: 4838,
4843
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8091118.pdf3.07 MBAdobe PDF
Title: Comparative Study of Negative Capacitance Ge pFETs With HfZrO<sub><italic>x</italic></sub> Partially and Fully Covering Gate Region
Authors: Jiuren Zhou;Genquan Han;Jing Li;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report a comparative study of the negative capacitance (NC) Ge pFETs with HfZrO<sub>x</sub> (HZO) partially and fully covering gate region. Utilizing the layout with HZO partially covering the gate, the internal voltage gain dV<sub>int</sub>/dV<sub>GS</sub> &gt; 10 is demonstrated in NC Ge pFETs, which is attributed to the NC effect induced by HZO film. NC transistor demonstrates the hysteresis above 2 V, the sub-60 mV/decade subthreshold swing, and the improved drive current over internal-gated MOSFET. As the area of HZO is increased to fully cover the gate, the increased ferroelectric capacitance C<sub>FE</sub> produces the much better capacitance matching between C<sub>FE</sub> and the MOS capacitance of TaN/HfO<sub>2</sub>/Ge channel, contributing to the elimination of hysteresis of the NC Ge pFET. NC Ge pFETs with the gate fully covered by HZO achieve a much higher gate capacitance peak and a 36% enhancement in drive current compared to the devices with HZO partially covering gate.
URI: http://localhost/handle/Hannan/227753
volume: 64
issue: 12
More Information: 4838,
4843
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8091118.pdf3.07 MBAdobe PDF