Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/221396
Title: The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley
Authors: Hongyan Chen;Ping Wang;Jingsi Cheng;ZhaoLing Li;Lixin Guo;Zhiyong Zhang
Year: 2017
Publisher: IEEE
Abstract: The role of cluster scattering on electron transport properties of ZnMgO/ZnO heterostructures considering three- and five-valley conduction band models was investigated with an ensemble Monte Carlo program developed by us. The cluster scattering is modeled as an elastic collision, in which the electrons confined in ZnO well are scattered by MgZnO clusters. The interface roughness scattering, dislocation scattering, alloy disorder scattering, and phonon scattering are also taken into account in the simulation. For both energy band models, it is found that Mg composition fluctuation (&x03B7;), the cluster size (&x03BE;), and the 2-D electron gas sheet density (Ns) have a great impact on low-field mobility owing to the cluster scattering. But the low-field mobility of five-valley is slightly smaller than that of three-valley due to the increased total scattering. A further comparison of velocity-field transport characteristics shows that the cluster scattering is prevailing at low temperature, and it significantly decreases the electron drift velocity for both energy band models. Moreover, the threshold electric fields of these two models are both enhanced by approximately 10 kV/cm at 10 K with cluster scattering considered. This paper is beneficial for designing ZnMgO/ZnO heterostructure devices.
URI: http://localhost/handle/Hannan/221396
volume: 64
issue: 5
More Information: 2148,
2154
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7892862.pdf1.78 MBAdobe PDF
Title: The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley
Authors: Hongyan Chen;Ping Wang;Jingsi Cheng;ZhaoLing Li;Lixin Guo;Zhiyong Zhang
Year: 2017
Publisher: IEEE
Abstract: The role of cluster scattering on electron transport properties of ZnMgO/ZnO heterostructures considering three- and five-valley conduction band models was investigated with an ensemble Monte Carlo program developed by us. The cluster scattering is modeled as an elastic collision, in which the electrons confined in ZnO well are scattered by MgZnO clusters. The interface roughness scattering, dislocation scattering, alloy disorder scattering, and phonon scattering are also taken into account in the simulation. For both energy band models, it is found that Mg composition fluctuation (&x03B7;), the cluster size (&x03BE;), and the 2-D electron gas sheet density (Ns) have a great impact on low-field mobility owing to the cluster scattering. But the low-field mobility of five-valley is slightly smaller than that of three-valley due to the increased total scattering. A further comparison of velocity-field transport characteristics shows that the cluster scattering is prevailing at low temperature, and it significantly decreases the electron drift velocity for both energy band models. Moreover, the threshold electric fields of these two models are both enhanced by approximately 10 kV/cm at 10 K with cluster scattering considered. This paper is beneficial for designing ZnMgO/ZnO heterostructure devices.
URI: http://localhost/handle/Hannan/221396
volume: 64
issue: 5
More Information: 2148,
2154
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7892862.pdf1.78 MBAdobe PDF
Title: The Cluster Scattering in ZnMgO/ZnO Heterostructures With Three- and Five-Valley
Authors: Hongyan Chen;Ping Wang;Jingsi Cheng;ZhaoLing Li;Lixin Guo;Zhiyong Zhang
Year: 2017
Publisher: IEEE
Abstract: The role of cluster scattering on electron transport properties of ZnMgO/ZnO heterostructures considering three- and five-valley conduction band models was investigated with an ensemble Monte Carlo program developed by us. The cluster scattering is modeled as an elastic collision, in which the electrons confined in ZnO well are scattered by MgZnO clusters. The interface roughness scattering, dislocation scattering, alloy disorder scattering, and phonon scattering are also taken into account in the simulation. For both energy band models, it is found that Mg composition fluctuation (&x03B7;), the cluster size (&x03BE;), and the 2-D electron gas sheet density (Ns) have a great impact on low-field mobility owing to the cluster scattering. But the low-field mobility of five-valley is slightly smaller than that of three-valley due to the increased total scattering. A further comparison of velocity-field transport characteristics shows that the cluster scattering is prevailing at low temperature, and it significantly decreases the electron drift velocity for both energy band models. Moreover, the threshold electric fields of these two models are both enhanced by approximately 10 kV/cm at 10 K with cluster scattering considered. This paper is beneficial for designing ZnMgO/ZnO heterostructure devices.
URI: http://localhost/handle/Hannan/221396
volume: 64
issue: 5
More Information: 2148,
2154
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7892862.pdf1.78 MBAdobe PDF