Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/208617
Title: Polycrystalline Diamond MOSFET With MoO<sub>3</sub> Gate Dielectric and Passivation Layer
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Dazheng Chen;Pengzhi Yang;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the hydrogen terminated polycrystalline diamond MOSFET with a 10-nm MoO<sub>3</sub> gate dielectric and a 50-nm MoO<sub>3</sub> passivation layer. The device with a gate length of 2 &x03BC;m shows the saturation drain current (IDsat) of 100 mA/mm, the transconductance of 35 mS/mm, and the ON-resistance of 76.54 Q&x00B7;mm at V<sub>GS</sub> = -2.5 V. The stability of the repeated I<sub>DS</sub>-V<sub>GS</sub> measurements was demonstrated by a mere I<sub>Dsat</sub> decrease of 3.3% between the first and third sweepings. In addition, the devices worked well at 200 &x00B0;C delivering even larger I<sub>Dsat</sub> than that at room temperature. The possible mechanisms for I<sub>DS</sub>-V<sub>GS</sub> changes in the successive measurements and induced by the change of the ambient temperature are suggested.
URI: http://localhost/handle/Hannan/208617
volume: 38
issue: 9
More Information: 1302,
1304
Appears in Collections:2017

Files in This Item:
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7982701.pdf734.64 kBAdobe PDF
Title: Polycrystalline Diamond MOSFET With MoO<sub>3</sub> Gate Dielectric and Passivation Layer
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Dazheng Chen;Pengzhi Yang;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the hydrogen terminated polycrystalline diamond MOSFET with a 10-nm MoO<sub>3</sub> gate dielectric and a 50-nm MoO<sub>3</sub> passivation layer. The device with a gate length of 2 &x03BC;m shows the saturation drain current (IDsat) of 100 mA/mm, the transconductance of 35 mS/mm, and the ON-resistance of 76.54 Q&x00B7;mm at V<sub>GS</sub> = -2.5 V. The stability of the repeated I<sub>DS</sub>-V<sub>GS</sub> measurements was demonstrated by a mere I<sub>Dsat</sub> decrease of 3.3% between the first and third sweepings. In addition, the devices worked well at 200 &x00B0;C delivering even larger I<sub>Dsat</sub> than that at room temperature. The possible mechanisms for I<sub>DS</sub>-V<sub>GS</sub> changes in the successive measurements and induced by the change of the ambient temperature are suggested.
URI: http://localhost/handle/Hannan/208617
volume: 38
issue: 9
More Information: 1302,
1304
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7982701.pdf734.64 kBAdobe PDF
Title: Polycrystalline Diamond MOSFET With MoO<sub>3</sub> Gate Dielectric and Passivation Layer
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Dazheng Chen;Pengzhi Yang;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the hydrogen terminated polycrystalline diamond MOSFET with a 10-nm MoO<sub>3</sub> gate dielectric and a 50-nm MoO<sub>3</sub> passivation layer. The device with a gate length of 2 &x03BC;m shows the saturation drain current (IDsat) of 100 mA/mm, the transconductance of 35 mS/mm, and the ON-resistance of 76.54 Q&x00B7;mm at V<sub>GS</sub> = -2.5 V. The stability of the repeated I<sub>DS</sub>-V<sub>GS</sub> measurements was demonstrated by a mere I<sub>Dsat</sub> decrease of 3.3% between the first and third sweepings. In addition, the devices worked well at 200 &x00B0;C delivering even larger I<sub>Dsat</sub> than that at room temperature. The possible mechanisms for I<sub>DS</sub>-V<sub>GS</sub> changes in the successive measurements and induced by the change of the ambient temperature are suggested.
URI: http://localhost/handle/Hannan/208617
volume: 38
issue: 9
More Information: 1302,
1304
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7982701.pdf734.64 kBAdobe PDF