Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/206234
Title: Performance Enhancement in Uniaxially Strained Germanium&x2013;Tin FinTFET: Fin Direction Dependence
Authors: Hongjuan Wang;Yan Liu;Genquan Han;Yao Shao;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate the impact of uniaxial tensile stress on the performance of germanium-tin (GeSn) fin tunneling field-effect transistor (FinTFET) with fin rotating within (001) plane by numerical simulation. The uniaxial tensile stress with a magnitude of 1 GPa is always along the fin direction. Nonlocal empirical pseudopotential method and k &x00B7; p method were utilized to calculate the energy band structure of GeSn. Dynamic nonlocal band-to-band tunneling (BTBT) algorithm was used to analyze the electrical characteristics of the strained GeSn FinTFETs with point and line tunneling modes. The substantial improvement of BTBT generation rate GBTBT and on-state current ION achieved in tensile-strained FinTFETs compared to the relaxed devices is attributed to the reduced direct bandgap EG in strained GeSn. The device performance enhancement induced by the stress demonstrates the obvious dependence on the fin direction and tunneling mode. Under 1 GPa uniaxial tensile stress, GeSn point-FinTFETs with (100) fin directions demonstrate an 11.7% I<sub>ON</sub> enhancement as compared with the relaxed devices. For the strained GeSn line-FinTFETs, the devices with (110) fin directions obtain a 96.7% I<sub>ON</sub> improvement, in comparison with the relaxed devices at V<sub>DD</sub> of -0.3 V.
URI: http://localhost/handle/Hannan/206234
volume: 64
issue: 7
More Information: 2804,
2811
Appears in Collections:2017

Files in This Item:
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7937944.pdf3.21 MBAdobe PDF
Title: Performance Enhancement in Uniaxially Strained Germanium&x2013;Tin FinTFET: Fin Direction Dependence
Authors: Hongjuan Wang;Yan Liu;Genquan Han;Yao Shao;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate the impact of uniaxial tensile stress on the performance of germanium-tin (GeSn) fin tunneling field-effect transistor (FinTFET) with fin rotating within (001) plane by numerical simulation. The uniaxial tensile stress with a magnitude of 1 GPa is always along the fin direction. Nonlocal empirical pseudopotential method and k &x00B7; p method were utilized to calculate the energy band structure of GeSn. Dynamic nonlocal band-to-band tunneling (BTBT) algorithm was used to analyze the electrical characteristics of the strained GeSn FinTFETs with point and line tunneling modes. The substantial improvement of BTBT generation rate GBTBT and on-state current ION achieved in tensile-strained FinTFETs compared to the relaxed devices is attributed to the reduced direct bandgap EG in strained GeSn. The device performance enhancement induced by the stress demonstrates the obvious dependence on the fin direction and tunneling mode. Under 1 GPa uniaxial tensile stress, GeSn point-FinTFETs with (100) fin directions demonstrate an 11.7% I<sub>ON</sub> enhancement as compared with the relaxed devices. For the strained GeSn line-FinTFETs, the devices with (110) fin directions obtain a 96.7% I<sub>ON</sub> improvement, in comparison with the relaxed devices at V<sub>DD</sub> of -0.3 V.
URI: http://localhost/handle/Hannan/206234
volume: 64
issue: 7
More Information: 2804,
2811
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7937944.pdf3.21 MBAdobe PDF
Title: Performance Enhancement in Uniaxially Strained Germanium&x2013;Tin FinTFET: Fin Direction Dependence
Authors: Hongjuan Wang;Yan Liu;Genquan Han;Yao Shao;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate the impact of uniaxial tensile stress on the performance of germanium-tin (GeSn) fin tunneling field-effect transistor (FinTFET) with fin rotating within (001) plane by numerical simulation. The uniaxial tensile stress with a magnitude of 1 GPa is always along the fin direction. Nonlocal empirical pseudopotential method and k &x00B7; p method were utilized to calculate the energy band structure of GeSn. Dynamic nonlocal band-to-band tunneling (BTBT) algorithm was used to analyze the electrical characteristics of the strained GeSn FinTFETs with point and line tunneling modes. The substantial improvement of BTBT generation rate GBTBT and on-state current ION achieved in tensile-strained FinTFETs compared to the relaxed devices is attributed to the reduced direct bandgap EG in strained GeSn. The device performance enhancement induced by the stress demonstrates the obvious dependence on the fin direction and tunneling mode. Under 1 GPa uniaxial tensile stress, GeSn point-FinTFETs with (100) fin directions demonstrate an 11.7% I<sub>ON</sub> enhancement as compared with the relaxed devices. For the strained GeSn line-FinTFETs, the devices with (110) fin directions obtain a 96.7% I<sub>ON</sub> improvement, in comparison with the relaxed devices at V<sub>DD</sub> of -0.3 V.
URI: http://localhost/handle/Hannan/206234
volume: 64
issue: 7
More Information: 2804,
2811
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7937944.pdf3.21 MBAdobe PDF