Please use this identifier to cite or link to this item: http://localhost:80/handle/Hannan/201628
Authors: Sch. of Electr. & Comput. Eng;Yeongkyo Seo ; Xuanyao Fong ; Kon-Woo Kwon ; Roy, Kaushik
subject: MRAM devices; cache storage; spin Hall effect; SH-MRAM; STT; differential sensing scheme; dual-ported spin-Hall magnetic random-access memory; on-chip cache applications; read access; read ports; sensing margin; slow write latency; spin-Hall effect based spin-transfer torque; write access; write ports; Magnetic tunneling; Mathematical model; Power demand; Resistance; Sensors; Switches; Transistors; 1R/1W ports; Spin electronics; differential memory; magnetic random-access memory; multi-terminal STT-MRAM; read/write ports; spin Hall effect; spin-Hall effect; spin-transfer torque;
Year: 2015
Publisher: ieee
Description: 
URI: http://localhost/handle/Hannan/201628
ISSN: 1949-307X
volume: 6
More Information: 1
4
Appears in Collections:2015

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Authors: Sch. of Electr. & Comput. Eng;Yeongkyo Seo ; Xuanyao Fong ; Kon-Woo Kwon ; Roy, Kaushik
subject: MRAM devices; cache storage; spin Hall effect; SH-MRAM; STT; differential sensing scheme; dual-ported spin-Hall magnetic random-access memory; on-chip cache applications; read access; read ports; sensing margin; slow write latency; spin-Hall effect based spin-transfer torque; write access; write ports; Magnetic tunneling; Mathematical model; Power demand; Resistance; Sensors; Switches; Transistors; 1R/1W ports; Spin electronics; differential memory; magnetic random-access memory; multi-terminal STT-MRAM; read/write ports; spin Hall effect; spin-Hall effect; spin-transfer torque;
Year: 2015
Publisher: ieee
Description: 
URI: http://localhost/handle/Hannan/201628
ISSN: 1949-307X
volume: 6
More Information: 1
4
Appears in Collections:2015

Files in This Item:
File Description SizeFormat 
7084605.pdf501.9 kBAdobe PDFThumbnail
Preview File
Authors: Sch. of Electr. & Comput. Eng;Yeongkyo Seo ; Xuanyao Fong ; Kon-Woo Kwon ; Roy, Kaushik
subject: MRAM devices; cache storage; spin Hall effect; SH-MRAM; STT; differential sensing scheme; dual-ported spin-Hall magnetic random-access memory; on-chip cache applications; read access; read ports; sensing margin; slow write latency; spin-Hall effect based spin-transfer torque; write access; write ports; Magnetic tunneling; Mathematical model; Power demand; Resistance; Sensors; Switches; Transistors; 1R/1W ports; Spin electronics; differential memory; magnetic random-access memory; multi-terminal STT-MRAM; read/write ports; spin Hall effect; spin-Hall effect; spin-transfer torque;
Year: 2015
Publisher: ieee
Description: 
URI: http://localhost/handle/Hannan/201628
ISSN: 1949-307X
volume: 6
More Information: 1
4
Appears in Collections:2015

Files in This Item:
File Description SizeFormat 
7084605.pdf501.9 kBAdobe PDFThumbnail
Preview File