Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/188703
Title: Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes
Authors: Ling Lv;Peixian Li;Xiaohua Ma;Linyue Liu;Ling Yang;Xiaowei Zhou;Jincheng Zhang;Yanrong Cao;Zhen Bi;Teng Jiang;Qing Zhu;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.
URI: http://localhost/handle/Hannan/188703
volume: 64
issue: 1
More Information: 643,
647
Appears in Collections:2017

Files in This Item:
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7748520.pdf764.42 kBAdobe PDF
Title: Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes
Authors: Ling Lv;Peixian Li;Xiaohua Ma;Linyue Liu;Ling Yang;Xiaowei Zhou;Jincheng Zhang;Yanrong Cao;Zhen Bi;Teng Jiang;Qing Zhu;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.
URI: http://localhost/handle/Hannan/188703
volume: 64
issue: 1
More Information: 643,
647
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7748520.pdf764.42 kBAdobe PDF
Title: Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes
Authors: Ling Lv;Peixian Li;Xiaohua Ma;Linyue Liu;Ling Yang;Xiaowei Zhou;Jincheng Zhang;Yanrong Cao;Zhen Bi;Teng Jiang;Qing Zhu;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.
URI: http://localhost/handle/Hannan/188703
volume: 64
issue: 1
More Information: 643,
647
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7748520.pdf764.42 kBAdobe PDF