Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/180455
Title: High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications
Authors: Chenbing Qu;Ruixue Ding;Zhangming Zhu
Year: 2017
Publisher: IEEE
Abstract: This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a lumped-circuit model and the effective loop parameters of multi-TSVs. The calculated results are validated by the 3-D full-wave field solver high frequency simulator structure (HFSS) over a wide frequency range.
URI: http://localhost/handle/Hannan/180455
volume: 27
issue: 8
More Information: 721,
723
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7983393.pdf686.33 kBAdobe PDF
Title: High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications
Authors: Chenbing Qu;Ruixue Ding;Zhangming Zhu
Year: 2017
Publisher: IEEE
Abstract: This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a lumped-circuit model and the effective loop parameters of multi-TSVs. The calculated results are validated by the 3-D full-wave field solver high frequency simulator structure (HFSS) over a wide frequency range.
URI: http://localhost/handle/Hannan/180455
volume: 27
issue: 8
More Information: 721,
723
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7983393.pdf686.33 kBAdobe PDF
Title: High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications
Authors: Chenbing Qu;Ruixue Ding;Zhangming Zhu
Year: 2017
Publisher: IEEE
Abstract: This letter makes a fast and efficient analysis of the scalable differential through-silicon via (TSV) configuration in 3-D integrated circuits. The equivalent-circuit model of a differential TSV pair is described. The critical differential characteristics are analyzed and calculated in terms of a lumped-circuit model and the effective loop parameters of multi-TSVs. The calculated results are validated by the 3-D full-wave field solver high frequency simulator structure (HFSS) over a wide frequency range.
URI: http://localhost/handle/Hannan/180455
volume: 27
issue: 8
More Information: 721,
723
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7983393.pdf686.33 kBAdobe PDF