Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/174796
Title: Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding;Yuejin Li
Year: 2017
Publisher: IEEE
Abstract: The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance-inductance-capacitance-conductance model and S-parameters of the DDC-TSV array are constructed by the Advanced Design System (ADS), which is verified by the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS). Simulation results of the ADS and HFSS accord well with each other with frequencies up to 100 GHz, which shows good accuracy of the proposed model.
URI: http://localhost/handle/Hannan/174796
volume: 27
issue: 7
More Information: 618,
620
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7953429.pdf458.63 kBAdobe PDF
Title: Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding;Yuejin Li
Year: 2017
Publisher: IEEE
Abstract: The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance-inductance-capacitance-conductance model and S-parameters of the DDC-TSV array are constructed by the Advanced Design System (ADS), which is verified by the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS). Simulation results of the ADS and HFSS accord well with each other with frequencies up to 100 GHz, which shows good accuracy of the proposed model.
URI: http://localhost/handle/Hannan/174796
volume: 27
issue: 7
More Information: 618,
620
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7953429.pdf458.63 kBAdobe PDF
Title: Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding;Yuejin Li
Year: 2017
Publisher: IEEE
Abstract: The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance-inductance-capacitance-conductance model and S-parameters of the DDC-TSV array are constructed by the Advanced Design System (ADS), which is verified by the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS). Simulation results of the ADS and HFSS accord well with each other with frequencies up to 100 GHz, which shows good accuracy of the proposed model.
URI: http://localhost/handle/Hannan/174796
volume: 27
issue: 7
More Information: 618,
620
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7953429.pdf458.63 kBAdobe PDF