Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/173192
Title: Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
Authors: Jiuren Zhou;Genquan Han;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: Negative capacitance (NC) GeSn pFETs integrated with HfZrO<sub>x</sub> (HZO) ferroelectric film is demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude of IDS. The ratio of remnant polarization to coercivity in HZO is significantly improved with the increasing of the annealing temperature from 400&x00B0;C to 500&x00B0;C, which contributes to the effective reduction of hysteresis in ferroelectric NC GeSn transistors. Ferroelectric NC GeSn pFET annealed at 500&x00B0;C achieves a hysteresis of 70 mV while maintaining a steep SS dramatically lower than 60 mV/decade, and an improved IDS over control device without HZO.
URI: http://localhost/handle/Hannan/173192
volume: 38
issue: 8
More Information: 1157,
1160
Appears in Collections:2017

Files in This Item:
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7945257.pdf1.27 MBAdobe PDF
Title: Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
Authors: Jiuren Zhou;Genquan Han;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: Negative capacitance (NC) GeSn pFETs integrated with HfZrO<sub>x</sub> (HZO) ferroelectric film is demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude of IDS. The ratio of remnant polarization to coercivity in HZO is significantly improved with the increasing of the annealing temperature from 400&x00B0;C to 500&x00B0;C, which contributes to the effective reduction of hysteresis in ferroelectric NC GeSn transistors. Ferroelectric NC GeSn pFET annealed at 500&x00B0;C achieves a hysteresis of 70 mV while maintaining a steep SS dramatically lower than 60 mV/decade, and an improved IDS over control device without HZO.
URI: http://localhost/handle/Hannan/173192
volume: 38
issue: 8
More Information: 1157,
1160
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7945257.pdf1.27 MBAdobe PDF
Title: Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
Authors: Jiuren Zhou;Genquan Han;Yue Peng;Yan Liu;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: Negative capacitance (NC) GeSn pFETs integrated with HfZrO<sub>x</sub> (HZO) ferroelectric film is demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude of IDS. The ratio of remnant polarization to coercivity in HZO is significantly improved with the increasing of the annealing temperature from 400&x00B0;C to 500&x00B0;C, which contributes to the effective reduction of hysteresis in ferroelectric NC GeSn transistors. Ferroelectric NC GeSn pFET annealed at 500&x00B0;C achieves a hysteresis of 70 mV while maintaining a steep SS dramatically lower than 60 mV/decade, and an improved IDS over control device without HZO.
URI: http://localhost/handle/Hannan/173192
volume: 38
issue: 8
More Information: 1157,
1160
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7945257.pdf1.27 MBAdobe PDF