Please use this identifier to cite or link to this item: http://dlib.scu.ac.ir/handle/Hannan/160490
Title: A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules
Authors: Amir Sajjad Bahman;Ke Ma;Pramod Ghimire;Francesco Iannuzzo;Frede Blaabjerg
subject: insulated gate bipolar transistor (IGBT)|reliability|thermal model|Finite-element method (FEM)|power semiconductor|mission profile
Year: 2016
Publisher: IEEE
Abstract: The conventional RC-lumped thermal networks are widely used to estimate the temperature of power devices, but they lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high-power insulated gate bipolar transistor (IGBT) modules. On the other hand, a finite-element (FE)-based simulation is the other method, which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for a long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel 3-D RC-lumped thermal network for the high-power IGBT modules. The thermal coupling effects among the chips and among the critical layers are modeled, and boundary conditions, including the cooling conditions, are also considered. It is demonstrated that the proposed thermal model enables both accurate and fast temperature estimation of high-power IGBT modules in the real loading conditions of the converter while maintaining the critical details of the thermal dynamics and thermal distribution. The proposed thermal model is verified by both the FE-based simulation and the experimental results.
URI: http://localhost/handle/Hannan/160490
ISSN: 2168-6777
2168-6785
volume: 4
issue: 3
More Information: 1050
1063
Appears in Collections:2016

Files in This Item:
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Title: A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules
Authors: Amir Sajjad Bahman;Ke Ma;Pramod Ghimire;Francesco Iannuzzo;Frede Blaabjerg
subject: insulated gate bipolar transistor (IGBT)|reliability|thermal model|Finite-element method (FEM)|power semiconductor|mission profile
Year: 2016
Publisher: IEEE
Abstract: The conventional RC-lumped thermal networks are widely used to estimate the temperature of power devices, but they lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high-power insulated gate bipolar transistor (IGBT) modules. On the other hand, a finite-element (FE)-based simulation is the other method, which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for a long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel 3-D RC-lumped thermal network for the high-power IGBT modules. The thermal coupling effects among the chips and among the critical layers are modeled, and boundary conditions, including the cooling conditions, are also considered. It is demonstrated that the proposed thermal model enables both accurate and fast temperature estimation of high-power IGBT modules in the real loading conditions of the converter while maintaining the critical details of the thermal dynamics and thermal distribution. The proposed thermal model is verified by both the FE-based simulation and the experimental results.
URI: http://localhost/handle/Hannan/160490
ISSN: 2168-6777
2168-6785
volume: 4
issue: 3
More Information: 1050
1063
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7412682.pdf5.51 MBAdobe PDFThumbnail
Preview File
Title: A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules
Authors: Amir Sajjad Bahman;Ke Ma;Pramod Ghimire;Francesco Iannuzzo;Frede Blaabjerg
subject: insulated gate bipolar transistor (IGBT)|reliability|thermal model|Finite-element method (FEM)|power semiconductor|mission profile
Year: 2016
Publisher: IEEE
Abstract: The conventional RC-lumped thermal networks are widely used to estimate the temperature of power devices, but they lack of accuracy in addressing detailed thermal behaviors/couplings in different locations and layers of the high-power insulated gate bipolar transistor (IGBT) modules. On the other hand, a finite-element (FE)-based simulation is the other method, which is often used to analyze the steady-state thermal distribution of IGBT modules, but it is not possible to be used for a long-term analysis of load profiles of power converter, which is needed for reliability assessments and better thermal design. This paper proposes a novel 3-D RC-lumped thermal network for the high-power IGBT modules. The thermal coupling effects among the chips and among the critical layers are modeled, and boundary conditions, including the cooling conditions, are also considered. It is demonstrated that the proposed thermal model enables both accurate and fast temperature estimation of high-power IGBT modules in the real loading conditions of the converter while maintaining the critical details of the thermal dynamics and thermal distribution. The proposed thermal model is verified by both the FE-based simulation and the experimental results.
URI: http://localhost/handle/Hannan/160490
ISSN: 2168-6777
2168-6785
volume: 4
issue: 3
More Information: 1050
1063
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7412682.pdf5.51 MBAdobe PDFThumbnail
Preview File