Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/159918
Title: Diamond Field Effect Transistors With MoO<sub>3</sub> Gate Dielectric
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Shengrui Xu;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the first attempt of the diamond MOSFETs with MoO<sub>3</sub> dielectric directly deposited on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors with 4-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gate show a transconductance of 29 mS/mm and an ON-resistance of <inline-formula> <tex-math notation="LaTeX">75.25~\Omega \cdot \text {mm} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}} - V_{\text {TH}}\vert = 2.2 </tex-math></inline-formula> V, respectively. The effective mobility is extracted to be 108 cm<sup>2</sup>/(Vs) from the relationship between the ON-resistance and <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}}- V_{\text {TH}}\vert </tex-math></inline-formula>. The relatively high transconductance among the reported diamond MOSFETs with the same gate length could be attributed to the quite low ON-resistance. The evaluated high mobility indicates good interface characteristics between diamond and MoO<sub>3</sub>. However, the saturation drain current is limited at 33 mA/mm by the forward gate breakdown at <inline-formula> <tex-math notation="LaTeX">\text{V}_{\text {GS}} </tex-math></inline-formula> of around &x2212;2 V.
URI: http://localhost/handle/Hannan/159918
volume: 38
issue: 6
More Information: 786,
789
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7903674.pdf766.77 kBAdobe PDF
Title: Diamond Field Effect Transistors With MoO<sub>3</sub> Gate Dielectric
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Shengrui Xu;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the first attempt of the diamond MOSFETs with MoO<sub>3</sub> dielectric directly deposited on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors with 4-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gate show a transconductance of 29 mS/mm and an ON-resistance of <inline-formula> <tex-math notation="LaTeX">75.25~\Omega \cdot \text {mm} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}} - V_{\text {TH}}\vert = 2.2 </tex-math></inline-formula> V, respectively. The effective mobility is extracted to be 108 cm<sup>2</sup>/(Vs) from the relationship between the ON-resistance and <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}}- V_{\text {TH}}\vert </tex-math></inline-formula>. The relatively high transconductance among the reported diamond MOSFETs with the same gate length could be attributed to the quite low ON-resistance. The evaluated high mobility indicates good interface characteristics between diamond and MoO<sub>3</sub>. However, the saturation drain current is limited at 33 mA/mm by the forward gate breakdown at <inline-formula> <tex-math notation="LaTeX">\text{V}_{\text {GS}} </tex-math></inline-formula> of around &x2212;2 V.
URI: http://localhost/handle/Hannan/159918
volume: 38
issue: 6
More Information: 786,
789
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7903674.pdf766.77 kBAdobe PDF
Title: Diamond Field Effect Transistors With MoO<sub>3</sub> Gate Dielectric
Authors: Zeyang Ren;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Shengrui Xu;Yao Li;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We report the first attempt of the diamond MOSFETs with MoO<sub>3</sub> dielectric directly deposited on H-diamond surface preserving atmospheric-adsorbate-induced 2DHG. The transistors with 4-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gate show a transconductance of 29 mS/mm and an ON-resistance of <inline-formula> <tex-math notation="LaTeX">75.25~\Omega \cdot \text {mm} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}} - V_{\text {TH}}\vert = 2.2 </tex-math></inline-formula> V, respectively. The effective mobility is extracted to be 108 cm<sup>2</sup>/(Vs) from the relationship between the ON-resistance and <inline-formula> <tex-math notation="LaTeX">\vert V_{\text {GS}}- V_{\text {TH}}\vert </tex-math></inline-formula>. The relatively high transconductance among the reported diamond MOSFETs with the same gate length could be attributed to the quite low ON-resistance. The evaluated high mobility indicates good interface characteristics between diamond and MoO<sub>3</sub>. However, the saturation drain current is limited at 33 mA/mm by the forward gate breakdown at <inline-formula> <tex-math notation="LaTeX">\text{V}_{\text {GS}} </tex-math></inline-formula> of around &x2212;2 V.
URI: http://localhost/handle/Hannan/159918
volume: 38
issue: 6
More Information: 786,
789
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7903674.pdf766.77 kBAdobe PDF