Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/142441
Title: Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model
Authors: Yibo Wang;Genquan Han;Yan Liu;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> type-II staggered heterojunction tunneling fieldeffect transistors (TFETs) with the analytical model. GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> exhibits a remarkable type-II band lineup and the effective bandgap EG,eff at interface is significantly reduced with the increasing of bismuth (Bi) and nitrogen (N) compositions. Theoretical characterization shows that the band-to-band tunneling probability and current of TFETs are boosted with the decreasing of EG,eff at the GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> staggered tunneling junction by increasing Bi and N compositions. It is demonstrated by the analytical calculation that GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> heterostructure is a potential candidate for high-performance TFET.
URI: http://localhost/handle/Hannan/142441
volume: 64
issue: 4
More Information: 1541,
1547
Appears in Collections:2017

Files in This Item:
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7862729.pdf2.75 MBAdobe PDF
Title: Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model
Authors: Yibo Wang;Genquan Han;Yan Liu;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> type-II staggered heterojunction tunneling fieldeffect transistors (TFETs) with the analytical model. GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> exhibits a remarkable type-II band lineup and the effective bandgap EG,eff at interface is significantly reduced with the increasing of bismuth (Bi) and nitrogen (N) compositions. Theoretical characterization shows that the band-to-band tunneling probability and current of TFETs are boosted with the decreasing of EG,eff at the GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> staggered tunneling junction by increasing Bi and N compositions. It is demonstrated by the analytical calculation that GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> heterostructure is a potential candidate for high-performance TFET.
URI: http://localhost/handle/Hannan/142441
volume: 64
issue: 4
More Information: 1541,
1547
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7862729.pdf2.75 MBAdobe PDF
Title: Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model
Authors: Yibo Wang;Genquan Han;Yan Liu;Chunfu Zhang;Qian Feng;Jincheng Zhang;Yue Hao
Year: 2017
Publisher: IEEE
Abstract: We investigate GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> type-II staggered heterojunction tunneling fieldeffect transistors (TFETs) with the analytical model. GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> exhibits a remarkable type-II band lineup and the effective bandgap EG,eff at interface is significantly reduced with the increasing of bismuth (Bi) and nitrogen (N) compositions. Theoretical characterization shows that the band-to-band tunneling probability and current of TFETs are boosted with the decreasing of EG,eff at the GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> staggered tunneling junction by increasing Bi and N compositions. It is demonstrated by the analytical calculation that GaAs<sub>1-x</sub>Bi<sub>x</sub>/GaAs<sub>1-y</sub>N<sub>y</sub> heterostructure is a potential candidate for high-performance TFET.
URI: http://localhost/handle/Hannan/142441
volume: 64
issue: 4
More Information: 1541,
1547
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7862729.pdf2.75 MBAdobe PDF