Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/136596
Title: Comparison of Photoresponse of Si-Based BIB THz Detectors
Authors: He Zhu;Zeping Weng;Jiaqi Zhu;Huizhen Wu;Ning Li;Ning Dai
Year: 2017
Publisher: IEEE
Abstract: We fabricate Si-based blocked impurity band (BIB) terahertz detectors using p-dopant through a standard silicon device fabrication technology. Comparison of photoresponse of the detectors under alternate operating mode and conventional operation mode (COM) is made. We demonstrate that the detectors can achieve high responsivity through positive bias on the active layer side, namely, alternate operating mode (AOM). The response of the detectors terminates at wavelength of 35 &x03BC;m (8.57 THz) under AOM; on the contrary, the response is cutoff at 31 &x03BC;m (9.68 THz) with a positive bias on the blocking layer, namely, COM. The relative responsivity at 0.6 V under AOM is 2.3 times of that under COM. By developing an energy band model, we find that the response difference under the two modes originates from the change of band offsets. The electric field in the blocking layer under AOM is much smaller than COM and most of the voltage drops in the active layer under AOM, which leads to the bigger multiplication of the photon-generated carriers than COM. By analyzing the origination of the dark current under the AOM, a method to improve the performance of BIB detectors under AOM is proposed.
URI: http://localhost/handle/Hannan/136596
volume: 64
issue: 3
More Information: 1094,
1099
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845666.pdf995.71 kBAdobe PDF
Title: Comparison of Photoresponse of Si-Based BIB THz Detectors
Authors: He Zhu;Zeping Weng;Jiaqi Zhu;Huizhen Wu;Ning Li;Ning Dai
Year: 2017
Publisher: IEEE
Abstract: We fabricate Si-based blocked impurity band (BIB) terahertz detectors using p-dopant through a standard silicon device fabrication technology. Comparison of photoresponse of the detectors under alternate operating mode and conventional operation mode (COM) is made. We demonstrate that the detectors can achieve high responsivity through positive bias on the active layer side, namely, alternate operating mode (AOM). The response of the detectors terminates at wavelength of 35 &x03BC;m (8.57 THz) under AOM; on the contrary, the response is cutoff at 31 &x03BC;m (9.68 THz) with a positive bias on the blocking layer, namely, COM. The relative responsivity at 0.6 V under AOM is 2.3 times of that under COM. By developing an energy band model, we find that the response difference under the two modes originates from the change of band offsets. The electric field in the blocking layer under AOM is much smaller than COM and most of the voltage drops in the active layer under AOM, which leads to the bigger multiplication of the photon-generated carriers than COM. By analyzing the origination of the dark current under the AOM, a method to improve the performance of BIB detectors under AOM is proposed.
URI: http://localhost/handle/Hannan/136596
volume: 64
issue: 3
More Information: 1094,
1099
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845666.pdf995.71 kBAdobe PDF
Title: Comparison of Photoresponse of Si-Based BIB THz Detectors
Authors: He Zhu;Zeping Weng;Jiaqi Zhu;Huizhen Wu;Ning Li;Ning Dai
Year: 2017
Publisher: IEEE
Abstract: We fabricate Si-based blocked impurity band (BIB) terahertz detectors using p-dopant through a standard silicon device fabrication technology. Comparison of photoresponse of the detectors under alternate operating mode and conventional operation mode (COM) is made. We demonstrate that the detectors can achieve high responsivity through positive bias on the active layer side, namely, alternate operating mode (AOM). The response of the detectors terminates at wavelength of 35 &x03BC;m (8.57 THz) under AOM; on the contrary, the response is cutoff at 31 &x03BC;m (9.68 THz) with a positive bias on the blocking layer, namely, COM. The relative responsivity at 0.6 V under AOM is 2.3 times of that under COM. By developing an energy band model, we find that the response difference under the two modes originates from the change of band offsets. The electric field in the blocking layer under AOM is much smaller than COM and most of the voltage drops in the active layer under AOM, which leads to the bigger multiplication of the photon-generated carriers than COM. By analyzing the origination of the dark current under the AOM, a method to improve the performance of BIB detectors under AOM is proposed.
URI: http://localhost/handle/Hannan/136596
volume: 64
issue: 3
More Information: 1094,
1099
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845666.pdf995.71 kBAdobe PDF