Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/132877
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dc.contributor.authorYouqiao Maen_US
dc.contributor.authorNghia Nguyen-Huuen_US
dc.contributor.authorJun Zhouen_US
dc.contributor.authorHiroshi Maedaen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorMohamed Eldlioen_US
dc.contributor.authorJarom&x00ED;r Pi&x0161;toraen_US
dc.contributor.authorMichael Cadaen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:03:09Z-
dc.date.available2020-04-06T07:03:09Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/JSTQE.2017.2660882en_US
dc.identifier.urihttp://localhost/handle/Hannan/132877-
dc.description.abstractA plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.en_US
dc.format.extent1,en_US
dc.format.extent7en_US
dc.publisherIEEEen_US
dc.relation.haspart7835682.pdfen_US
dc.titleMach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensoren_US
dc.typeArticleen_US
dc.journal.volume23en_US
dc.journal.issue4en_US
Appears in Collections:2017

Files in This Item:
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7835682.pdf1.71 MBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYouqiao Maen_US
dc.contributor.authorNghia Nguyen-Huuen_US
dc.contributor.authorJun Zhouen_US
dc.contributor.authorHiroshi Maedaen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorMohamed Eldlioen_US
dc.contributor.authorJarom&x00ED;r Pi&x0161;toraen_US
dc.contributor.authorMichael Cadaen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:03:09Z-
dc.date.available2020-04-06T07:03:09Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/JSTQE.2017.2660882en_US
dc.identifier.urihttp://localhost/handle/Hannan/132877-
dc.description.abstractA plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.en_US
dc.format.extent1,en_US
dc.format.extent7en_US
dc.publisherIEEEen_US
dc.relation.haspart7835682.pdfen_US
dc.titleMach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensoren_US
dc.typeArticleen_US
dc.journal.volume23en_US
dc.journal.issue4en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7835682.pdf1.71 MBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYouqiao Maen_US
dc.contributor.authorNghia Nguyen-Huuen_US
dc.contributor.authorJun Zhouen_US
dc.contributor.authorHiroshi Maedaen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorMohamed Eldlioen_US
dc.contributor.authorJarom&x00ED;r Pi&x0161;toraen_US
dc.contributor.authorMichael Cadaen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:03:09Z-
dc.date.available2020-04-06T07:03:09Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/JSTQE.2017.2660882en_US
dc.identifier.urihttp://localhost/handle/Hannan/132877-
dc.description.abstractA plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.en_US
dc.format.extent1,en_US
dc.format.extent7en_US
dc.publisherIEEEen_US
dc.relation.haspart7835682.pdfen_US
dc.titleMach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensoren_US
dc.typeArticleen_US
dc.journal.volume23en_US
dc.journal.issue4en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7835682.pdf1.71 MBAdobe PDF