Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/121467
Title: Laser Spike Annealing for Shallow Junctions in Ge CMOS
Authors: William Hsu;Feng Wen;Xiaoru Wang;Yun Wang;Andrei Dolocan;Anupam Roy;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
Year: 2017
Publisher: IEEE
Abstract: An annealing method capable of forming highly activated shallow junctions in Ge CMOS is still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to achieve high activation level, excellent diffusion control, and resulting low contact resistivity for both n-type and p-type Ge junctions when using P and B as the dopants, respectively. The thermal stability of the junctions activated by LSA is investigated. In addition, our results on Ge junctions and contacts are benchmarked systematically against published results using sheet resistance-junction depth (R<sub>s</sub> -X<sub>j</sub>) plots and contact resistivity-dopant concentration (&x03C1;<sub>c</sub> - N) plots.
URI: http://localhost/handle/Hannan/121467
volume: 64
issue: 2
More Information: 346,
352
Appears in Collections:2017

Files in This Item:
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7797159.pdf2.48 MBAdobe PDF
Title: Laser Spike Annealing for Shallow Junctions in Ge CMOS
Authors: William Hsu;Feng Wen;Xiaoru Wang;Yun Wang;Andrei Dolocan;Anupam Roy;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
Year: 2017
Publisher: IEEE
Abstract: An annealing method capable of forming highly activated shallow junctions in Ge CMOS is still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to achieve high activation level, excellent diffusion control, and resulting low contact resistivity for both n-type and p-type Ge junctions when using P and B as the dopants, respectively. The thermal stability of the junctions activated by LSA is investigated. In addition, our results on Ge junctions and contacts are benchmarked systematically against published results using sheet resistance-junction depth (R<sub>s</sub> -X<sub>j</sub>) plots and contact resistivity-dopant concentration (&x03C1;<sub>c</sub> - N) plots.
URI: http://localhost/handle/Hannan/121467
volume: 64
issue: 2
More Information: 346,
352
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7797159.pdf2.48 MBAdobe PDF
Title: Laser Spike Annealing for Shallow Junctions in Ge CMOS
Authors: William Hsu;Feng Wen;Xiaoru Wang;Yun Wang;Andrei Dolocan;Anupam Roy;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
Year: 2017
Publisher: IEEE
Abstract: An annealing method capable of forming highly activated shallow junctions in Ge CMOS is still lacking. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to achieve high activation level, excellent diffusion control, and resulting low contact resistivity for both n-type and p-type Ge junctions when using P and B as the dopants, respectively. The thermal stability of the junctions activated by LSA is investigated. In addition, our results on Ge junctions and contacts are benchmarked systematically against published results using sheet resistance-junction depth (R<sub>s</sub> -X<sub>j</sub>) plots and contact resistivity-dopant concentration (&x03C1;<sub>c</sub> - N) plots.
URI: http://localhost/handle/Hannan/121467
volume: 64
issue: 2
More Information: 346,
352
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7797159.pdf2.48 MBAdobe PDF