مرور بر اساس تاریخ انتشار Yue Hao

Showing results 1 to 20 of 31  بعدی >
PreviewIssue DateTitleContributor(s)
20173-D-MIMO With Massive Antennas Paves the Way to 5G Enhanced Mobile Broadband: From System Design to Field TrialsGuangyi Liu; Xueying Hou; Jing Jin; Fei Wang; Qixing Wang; Yue Hao; Yuhong Huang; Xiaoyun Wang; Xiao Xiao; Ailin Deng
20174H-SiC Trench IGBT With Back-Side n-p-n Collector for Low Turn-OFF LossYan-Juan Liu; Ying Wang; Yue Hao; Cheng-Hao Yu; Fei Cao
7067408.pdf.jpg2016Analysis of the Breakdown Characterization Method in GaN-Based HEMTsSheng Lei Zhao; Bin Hou; Wei Wei Chen; Min Han Mi; Jia Xin Zheng; Jin Cheng Zhang; Xiao Hua Ma; Yue Hao
2017Cascadable Neuron-Like Spiking Dynamics in Coupled VCSELs Subject to Orthogonally Polarized Optical Pulse InjectionShui Ying Xiang; Hao Zhang; Xing Xing Guo; Jia Fu Li; Ai Jun Wen; Wei Pan; Yue Hao
2017Comparative Study of Negative Capacitance Ge pFETs With HfZrO<sub><italic>x</italic></sub> Partially and Fully Covering Gate RegionJiuren Zhou; Genquan Han; Jing Li; Yue Peng; Yan Liu; Jincheng Zhang; Qing-Qing Sun; David Wei Zhang; Yue Hao
7526311.pdf.jpg2016Comparison Study of beta Ga2O3 Photodetectors on Bulk Substrate and SapphireQian Feng; Lu Huang; Genquan Han; Fuguo Li; Xiang Li; Liwei Fang; Xiangyu Xing; Jincheng Zhang; Wenxiang Mu; Zhitai Jia; Daoyou Guo; Weihua Tang; Xutang Tao; Yue Hao
2017Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen PressuresLu Huang; Qian Feng; Genquan Han; Fuguo Li; Xiang Li; Liwei Fang; Xiangyu Xing; Jincheng Zhang; Yue Hao
2017Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETsJing Li; Jiuren Zhou; Genquan Han; Yan Liu; Yue Peng; Jincheng Zhang; Qing-Qing Sun; David Wei Zhang; Yue Hao
2017Design of 3D filtering antenna for the application of terahertzYang Li; Lin-an Yang; Shao-bo Wang; Lin Du; Yue Hao
2017Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular WaveguideYang Li; Lin-An Yang; Lin Du; Kunzhe Zhang; Yue Hao
2017Diamond Field Effect Transistors With MoO<sub>3</sub> Gate DielectricZeyang Ren; Jinfeng Zhang; Jincheng Zhang; Chunfu Zhang; Shengrui Xu; Yao Li; Yue Hao
7501476.pdf.jpg2016Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium OxideShiwei Wu; Hong Wang; Jing Sun; Fang Song; Zhan Wang; Mei Yang; He Xi; Yong Xie; Haixia Gao; Jigang Ma; Xiaohua Ma; Yue Hao
2017Enhanced g<sub>m</sub> and f<sub>T</sub> With High Johnson&x2019;s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact LedgeLing Yang; Minhan Mi; Bin Hou; Hengshuang Zhang; Jiejie Zhu; Qing Zhu; Yang Lu; Meng Zhang; Yunlong He; Lixiang Chen; Xiaowei Zhou; Ling Lv; Xiaohua Ma; Yue Hao
2017Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICPYunlong He; Minhan Mi; Chong Wang; Xuefeng Zheng; Meng Zhang; Hengshuang Zhang; Ji Wu; Ling Yang; Peng Zhang; Xiaohua Ma; Yue Hao
2017Fast and Thermal Neutron Radiation Effects on GaN PIN DiodesLing Lv; Peixian Li; Xiaohua Ma; Linyue Liu; Ling Yang; Xiaowei Zhou; Jincheng Zhang; Yanrong Cao; Zhen Bi; Teng Jiang; Qing Zhu; Yue Hao
2017Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold SwingJiuren Zhou; Genquan Han; Yue Peng; Yan Liu; Jincheng Zhang; Qing-Qing Sun; David Wei Zhang; Yue Hao
7460184.pdf.jpg2016GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold SwingGenquan Han; Yibo Wang; Yan Liu; Chunfu Zhang; Qian Feng; Mingshan Liu; Shenglei Zhao; Buwen Cheng; Jincheng Zhang; Yue Hao
2017Hardening of Split-Gate Power UMOSFET Against High-Power Microwave RadiationJun-Peng Fang; Ying Wang; Yue Hao; Jun Liu; Ling-Ling Sun
7590056.pdf.jpg2016High-Performance Low-Bandgap Polymer Solar Cells With Optical Microcavity Employing Ultrathin Ag Film ElectrodeNing Li; Dazheng Chen; Chunfu Zhang; Jingjing Chang; Zhenhua Lin; Genquan Han; Jincheng Zhang; Lixin Guo; Yue Hao
2017Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al<sub>2</sub>O<sub>3</sub>/AlN Gate-StackJiejie Zhu; Qing Zhu; Lixiang Chen; Bin Hou; Ling Yang; Xiaowei Zhou; Xiaohua Ma; Yue Hao