مرور بر اساس تاریخ انتشار Xiaohua Ma

Showing results 1 to 7 of 7
PreviewIssue DateTitleContributor(s)
7501476.pdf.jpg2016Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium OxideShiwei Wu; Hong Wang; Jing Sun; Fang Song; Zhan Wang; Mei Yang; He Xi; Yong Xie; Haixia Gao; Jigang Ma; Xiaohua Ma; Yue Hao
2017Enhanced g<sub>m</sub> and f<sub>T</sub> With High Johnson&x2019;s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact LedgeLing Yang; Minhan Mi; Bin Hou; Hengshuang Zhang; Jiejie Zhu; Qing Zhu; Yang Lu; Meng Zhang; Yunlong He; Lixiang Chen; Xiaowei Zhou; Ling Lv; Xiaohua Ma; Yue Hao
2017Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICPYunlong He; Minhan Mi; Chong Wang; Xuefeng Zheng; Meng Zhang; Hengshuang Zhang; Ji Wu; Ling Yang; Peng Zhang; Xiaohua Ma; Yue Hao
2017Fast and Thermal Neutron Radiation Effects on GaN PIN DiodesLing Lv; Peixian Li; Xiaohua Ma; Linyue Liu; Ling Yang; Xiaowei Zhou; Jincheng Zhang; Yanrong Cao; Zhen Bi; Teng Jiang; Qing Zhu; Yue Hao
2017Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al<sub>2</sub>O<sub>3</sub>/AlN Gate-StackJiejie Zhu; Qing Zhu; Lixiang Chen; Bin Hou; Ling Yang; Xiaowei Zhou; Xiaohua Ma; Yue Hao
2017Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate StructureLing Yang; Minhan Mi; Bin Hou; Jiejie Zhu; Meng Zhang; Yunlong He; Yang Lu; Qing Zhu; Xiaowei Zhou; Ling Lv; Yanrong Cao; Xiaohua Ma; Yue Hao
7484268.pdf.jpg2016An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum WellsZhen Bi; Jincheng Zhang; Qiye Zheng; Ling Lv; Zhiyu Lin; Hengsheng Shan; Peixian Li; Xiaohua Ma; Yiping Han; Yue Hao