مرور بر اساس تاریخ انتشار Heinemann, Bernd

Showing results 1 to 6 of 6
PreviewIssue DateTitleContributor(s)
AL1751308.pdf.jpg2010A 0 . 13µm SiGe BiCMOS Technology Featuring f T / f max of 240 / 330 GHz and Gate Delays Below 3 psRücker, Holger; Heinemann, Bernd; Winkler, Wolfgang; Barth, Rainer; Borngräber, Johannes; Drews, J; Fischer, Gerhard G; Fox, Alexander; Grabolla, Thomas; Haak, Ulrich; Knoll, Dieter; Korndörfer, Falk; Mai, Andreas; Marschmeyer, Steffen; Schley, Peter; Schmidt, D; Schmidt, J; Schubert, Markus Andreas; Schulz, K; Tillack, Bernd; Wolansky, D; Yamamoto, Yuji
AL1932899.pdf.jpg2011Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technologyÖjefors, Erik; Heinemann, Bernd; Pfeiffer, Ullrich R.
AL1922437.pdf.jpg2011Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part II: Lateral ScalingSchröter, Michael; Wedel, Gerald; Heinemann, Bernd; Jungemann, Christoph; Krause, Julia; Chevalier, Pascal; Chantre, Alain
AL1922438.pdf.jpg2011Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part II: Lateral ScalingSchröter, Michael; Wedel, Gerald; Heinemann, Bernd; Jungemann, Christoph; Krause, Julia; Chevalier, Pascal; Chantre, Alain
AL1751294.pdf.jpg2010A Subharmonic Receiver in SiGe Technology for 122<formula formulatype="inline"><tex Notation="TeX">$~$</tex></formula>GHz Sensor ApplicationsSchmalz, Klaus; Winkler, Wolfgang; Borngraber, Johannes; Debski, Wojciech; Heinemann, Bernd; Scheytt, J. Christoph
AL2229601.pdf.jpg2013A Terahertz Detector Array in a SiGe HBT TechnologyHadi, Richard Al; Grzyb, Janusz; Heinemann, Bernd; Pfeiffer, Ullrich R